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Ni-Mn-Ga shape memory nanoactuation
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10.1063/1.4863667
/content/aip/journal/apl/104/4/10.1063/1.4863667
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/4/10.1063/1.4863667
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Overlay of SEM images showing a freestanding Ni-Mn-Ga double beam nanostructure (nanoactuator #1) after deformation (A) and after subsequent heating (B). (b) deflection of the beam tip during an electrical heating cycle and corresponding normalized electrical resistance of nanoactuator #1. The electrical resistance signal is interrupted between 1.1 and 1.95 mA due to experimental reasons. The length, width, and thickness of each nanobeam are 8 m, 200 nm, and 250 nm, respectively.

Image of FIG. 2.
FIG. 2.

Electrical resistance characteristics of a Ni-Mn-Ga double beam nanoactuator (#2) for a complete actuation cycle resulting in a hysteresis loop (black line) and for heating until destruction (bright red line). The inset shows a SEM image before actuation. The length, width and thickness of each nanobeam are 2 m, 100 nm, and 125 nm, respectively.

Image of FIG. 3.
FIG. 3.

(a) Coupled finite element simulation of temperature profiles along x-direction of Ni-Mn-Ga nanoactuator #2 for four different values of electrical heating current. The inset illustrates the geometry. The dashed line at x = 0 indicates the onset of the beam structure. (b) Simulation of normalized electrical resistance characteristics upon heating for the investigated Ni-Mn-Ga double beam actuators as indicated. The beam dimensions as well as the martensite phase fractions at the minima of electrical resistance characteristics are given.

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/content/aip/journal/apl/104/4/10.1063/1.4863667
2014-01-31
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ni-Mn-Ga shape memory nanoactuation
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/4/10.1063/1.4863667
10.1063/1.4863667
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