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A low-temperature order-disorder transition in Cu2
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Cu 2ZnSnS4 (CZTS) is an interesting material for sustainable photovoltaics, but efficiencies are limited by the low open-circuit voltage. A possible cause of this is disorder among the Cu and Zn cations, a phenomenon which is difficult to detect by standard techniques. We show that this issue can be overcome using near-resonant Raman scattering, which lets us estimate a critical temperature of 533 ± 10 K for the transition between ordered and disordered CZTS. These findings have deep significance for the synthesis of high-quality material, and pave the way for quantitative investigation of the impact of disorder on the performance of CZTS-based solar cells.
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