1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Raman-Brillouin scattering from a thin Ge layer: Acoustic phonons for probing Ge/GeO2 interfaces
Rent:
Rent this article for
USD
10.1063/1.4864790
/content/aip/journal/apl/104/6/10.1063/1.4864790
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/6/10.1063/1.4864790
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HRTEM of the GeO/Ge/InGaAs ⟨110⟩ stack. TEM sample preparation glue is seen on the top of the stack.

Image of FIG. 2.
FIG. 2.

Spectra calculated for a 25.5 nm Ge layer: Oxide free case and a series with ranging from 0.5 nm to 4 nm with 0.5 nm steps. Inset: Peak positions versus .

Image of FIG. 3.
FIG. 3.

Experimental spectrum (circles) and calculated ones for a 25.5 nm Ge layer: Oxide free (dotted line), 1.5 nm oxide (dashed line), and 0.5 nm IL plus 1 nm GeO (solid line).

Loading

Article metrics loading...

/content/aip/journal/apl/104/6/10.1063/1.4864790
2014-02-10
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman-Brillouin scattering from a thin Ge layer: Acoustic phonons for probing Ge/GeO2 interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/6/10.1063/1.4864790
10.1063/1.4864790
SEARCH_EXPAND_ITEM