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Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length
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10.1063/1.4865921
/content/aip/journal/apl/104/7/10.1063/1.4865921
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/7/10.1063/1.4865921
/content/aip/journal/apl/104/7/10.1063/1.4865921
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/content/aip/journal/apl/104/7/10.1063/1.4865921
2014-02-19
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/7/10.1063/1.4865921
10.1063/1.4865921
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