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Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length
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25.See supplementary material at http://dx.doi.org/10.1063/1.4865921 for the effect of Zn pulse doping of InGaAs nanowire. [Supplementary Material]
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/content/aip/journal/apl/104/7/10.1063/1.4865921
2014-02-19
2015-07-04

Abstract

We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths. The devices consisted of single InGaAs nanowires with a diameter of 30 nm grown on -type Si(111) substrates. The switch demonstrated steep subthreshold-slope (30 mV/decade) at drain-source voltage (V) of 0.10 V. Also, pinch-off behavior appeared at moderately low V, below 0.10 V. Reducing the channel length of the transistors attained a steep subthreshold slope (<60 mV/decade) and enhanced the drain current, which was 100 higher than that of the longer channels.

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Scitation: Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/7/10.1063/1.4865921
10.1063/1.4865921
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