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/content/aip/journal/apl/104/8/10.1063/1.4866969
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/content/aip/journal/apl/104/8/10.1063/1.4866969
2014-02-27
2016-12-11

Abstract

Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient for the YbGaN films increases with the Yb concentration from x = 0 to 0.3. YbGaN film near the phase boundary exhibited a maximum of 3.1%, which is approximately 2.5 times larger than that for a pure GaN.

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