Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. C. Chappert, A. Fert, and F. N. Van Dau, Nat. Mater. 6, 813823 (2007).
2. J. P. Velev, S. S. Jaswal, and E. Y. Tsymbal, Philos. Trans. R. Soc. London, Ser. A 369, 30693097 (2011).
3. E. Y. Tsymbal, O. N. Mryasov, and P. R. LeClair, J. Phys.: Condens. Matter 15, R109 (2003).
4. E. Y. Tsymbal and H. Kohlstedt, Science 313, 181183 (2006).
5. M. Y. Zhuravlev, R. F. Sabirianov, S. S. Jaswal, and E. Y. Tsymbal, Phys. Rev. Lett. 94, 246802 (2005).
6. M. Zhuravlev, S. Maekawa, and E. Tsymbal, Phys. Rev. B 81, 104419 (2010).
7. J. P. Velev, C.-G. Duan, K. D. Belashchenko, S. S. Jaswal, and E. Y. Tsymbal, Phys. Rev. Lett. 98, 137201 (2007).
8. J. P. Velev, C.-G. Duan, J. D. Burton, A. Smogunov, M. Niranjan, E. Tosatti, S. Jaswal, and E. Tsymbal, Nano Lett. 9, 427432 (2009).
9. V. Garcia, S. Fusil, K. Bouzehouane, S. Enouz-Vedrenne, N. D. Mathur, A. Barthélémy, and M. Bibes, Nature 460, 8184 (2009).
10. P. Maksymovych, S. Jesse, P. Yu, R. Ramesh, A. P. Baddorf, and S. V. Kalinin, Science 324, 14211425 (2009).
11. J. M. López, J. D. Burton, E. Y. Tsymbal, and J. P. Velev, Nano Lett. 11, 599603 (2011).
12. V. Garcia, M. Bibes, L. Bocher, S. Valencia, F. Kronast, A. Crassous, X. Moya, S. Enouz-Vedrenne, A. Gloter, D. Imhoff et al., Science 327, 11061110 (2010).
13. S. Valencia, A. Crassous, L. Bocher, V. Garcia, X. Moya, R. O. Cherifi, C. Deranlot, K. Bouzehouane, S. Fusil, A. Zobelli et al., Nat. Mater. 10, 753758 (2011).
14. D. Pantel, S. Goetze, D. Hesse, and M. Alexe, Nat. Mater. 11, 289293 (2012).
15. A. Chanthbouala, A. Crassous, V. Garcia, K. Bouzehouane, S. Fusil, X. Moya, J. Allibe, B. Dlubak, J. Grollier, S. Xavier et al., Nat. Nanotechnol. 7, 101 (2012).
16. A. Chanthbouala, V. Garcia, R. O. Cherifi, K. Bouzehouane, S. Fusil, X. Moya, S. Xavier, H. Yamada, C. Deranlot, N. D. Mathur et al., Nat. Mater. 11, 860 (2012).
17. A. Chanthbouala, R. Matsumoto, J. Grollier, V. Cros, A. Anane, A. Fert, A. V. Khvalkovskiy, K. A. Zvezdin, K. Nishimura, Y. Nagamine, H. Maehara, K. Tsunekawa, A. Fukushima, and S. Yuasa, Nat. Phys. 7, 626630 (2011).
18. M. Gajek, M. Bibes, A. Barthélémy, K. Bouzehouane, S. Fusil, M. Varela, J. Fontcuberta, and A. Fert, Phys. Rev. B 72, 020406(R) (2005).
19. M. Gajek, M. Bibes, S. Fusil, K. Bouzehouane, J. Fontcuberta, A. Barthélémy, and A. Fert, Nat. Mater. 6, 296 (2007).
20. S. Ju, T.-Y. Cai, G.-Y. Guo, and Z.-Y. Li, Phys. Rev. B 75, 064419 (2007).
21. F. Yang, M. H. Tang, Z. Ye, Y. C. Zhou, X. J. Zheng, J. X. Tang, J. J. Zhang, and J. He, J. Appl. Phys. 102, 044504 (2007).
22. N. A. Hill, J. Phys. Chem. B 104, 6694 (2000).
23. I. Theodonis, N. Kioussis, A. Kalitsov, M. Chshiev, and W. H. Butler, Phys. Rev. Lett. 97, 237205 (2006).
24. A. Kalitsov, M. Chshiev, I. Theodonis, N. Kioussis, and W. H. Butler, Phys. Rev. B 79, 174416 (2009).
25. A. Kalitsov, W. Silvestre, M. Chshiev, and J. Velev, Phys. Rev. B 88, 104430 (2013).
26. A. Kalitsov, P.-J. Zermatten, F. Bonell, G. Gaudin, S. Andrieu, C. Tiusan, M. Chshiev, and J. P. Velev, J. Phys.: Condens. Matter 25, 496005 (2013).

Data & Media loading...


Article metrics loading...



We predict that the tunneling electroresistance effect is present at finite bias even in multiferroic tunnel junctions (MFTJs) with inversion symmetry. The effect is highly sensitive to the relative magnetization orientation in the electrodes. In addition, we demonstrate control of the bias-dependence of the tunneling magnetoresistance (TMR) in MFTJs via switching of the ferroelectric polarization of the barrier. The polarization induces a monotonic bias behavior in TMR which can be reversed by polarization switching. The magnitude of both effects is proportional to the polarization. The underlying mechanism is the inversion symmetry breaking due to the polarization combined with the interplay of the and spin-dependent interfacial screening. These results expand the possibilities for the next-generation multifunctional devices.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd