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1.
1. S. Francoeur , M.-J. Seong , A. Mascarenhas , S. Tixier , M. Adamcyk , and T. Tiedje , Appl. Phys. Lett. 82, 3874 (2003).
http://dx.doi.org/10.1063/1.1581983
2.
2. K. Alberi , O. D. Dubon , W. Walukiewicz , K. M. Yu , K. Bertulis , and A. Krotkus , Appl. Phys. Lett. 91, 051909 (2007).
http://dx.doi.org/10.1063/1.2768312
3.
3. X. Lu , D. A. Beaton , R. B. Lewis , T. Tiedje , and Y. Zhang , Appl. Phys. Lett. 95, 041903 (2009).
http://dx.doi.org/10.1063/1.3191675
4.
4. B. Fluegel , S. Francoeur , A. Mascarenhas , S. Tixier , E. C. Young , and T. Tiedje , Phys. Rev. Lett. 97, 067205 (2006).
http://dx.doi.org/10.1103/PhysRevLett.97.067205
5.
5. S. K. Das , T. D. Das , S. Dhar , M. de la Mare , and A. Krier , Infrared Phys. Technol. 55, 156 (2012).
http://dx.doi.org/10.1016/j.infrared.2011.11.003
6.
6. Y. Song , S. Wang , I. S. Roy , P. Shi , and A. Hallen , J. Vac. Sci. Technol. B 30, 02B114 (2012).
http://dx.doi.org/10.1116/1.3672025
7.
7. M. K. Rajpalke , W. M. Linhart , M. Birkett , K. M. Yu , D. O. Scanlon , J. Buckeridge , T. S. Jones , M. J. Ashwin , and T. D. Veal , Appl. Phys. Lett. 103, 142106 (2013).
http://dx.doi.org/10.1063/1.4824077
8.
8. J. Kopaczek , R. Kudrawiec , W. M. Linhart , M. K. Rajpalke , K. M. Yu , T. S. Jones , M. J. Ashwin , J. Misiewicz , and T. D. Veal , Appl. Phys. Lett. 103, 261907 (2013).
http://dx.doi.org/10.1063/1.4858967
9.
9. M. K. Rajpalke , W. M. Linhart , M. Birkett , J. Alaria , K. M. Yu , J. Kopaczek , R. Kudrawiec , T. S. Jones , M. J. Ashwin , and T. D. Veal , J. Appl. Phys. 116, 043511 (2014).
http://dx.doi.org/10.1063/1.4891217
10.
10. M. P. Polak , P. Scharoch , R. Kudrawiec , J. Kopaczek , M. J. Winiarski , W. M. Linhart , M. K. Rajpalke , K. M. Yu , T. S. Jones , M. J. Ashwin , and T. D. Veal , J. Phys. D.: Appl. Phys. 47, 355107 (2014).
http://dx.doi.org/10.1088/0022-3727/47/35/355107
11.
11. J. Kopaczek , M. K. Rajpalke , W. M. Linhart , T. S. Jones , M. J. Ashwin , R. Kudrawiec , and T. D. Veal , Appl. Phys. Lett. 105, 112102 (2014).
http://dx.doi.org/10.1063/1.4895930
12.
12. A. M. Jean-Louis and C. Hamon , Phys. Status Solidi 34, 329 (1969).
http://dx.doi.org/10.1002/pssb.19690340134
13.
13. A. M. Jean-Louis , B. Ayrault , and J. Vargas , Phys. Status Solidi 34, 341 (1969).
http://dx.doi.org/10.1002/pssb.19690340135
14.
14. B. Joukoff and A. M. Jean-Louis , J. Cryst. Growth 12, 169 (1972).
http://dx.doi.org/10.1016/0022-0248(72)90047-4
15.
15. J. L. Zilko and J. E. Greene , Appl. Phys. Lett. 33, 254 (1978).
http://dx.doi.org/10.1063/1.90317
16.
16. A. J. Noreika , W. J. Takei , M. H. Francombe , and C. E. C. Wood , J. Appl. Phys. 53, 4932 (1982).
http://dx.doi.org/10.1063/1.331327
17.
17. J. J. Lee , J. D. Kim , and M. Razeghi , Appl. Phys. Lett. 70, 3266 (1997).
http://dx.doi.org/10.1063/1.119158
18.
18. J. J. Lee and M. Razeghi , Opto-Electron. Rev. 6, 25 (1998).
19.
19. Y. Song , S. Wang , I. S. Roy , P. Shi , A. Hallen , and Z. Lai , J. Cryst. Growth 378, 323 (2013).
http://dx.doi.org/10.1016/j.jcrysgro.2012.12.085
20.
20. A. Janotti , S.-H. Wei , and S. B. Zhang , Phys. Rev. B 65, 115203 (2002).
http://dx.doi.org/10.1103/PhysRevB.65.115203
21.
21. K. Oe , S. Ando , and K. Sugiyama , Jpn. J. Appl. Phys., Part 2 20, L303 (1981).
http://dx.doi.org/10.1143/JJAP.20.L303
22.
22. K. T. Huang , C. T. Chiu , R. M. Cohen , and G. B. Stringfellow , J. Appl. Phys. 75, 2857 (1994).
http://dx.doi.org/10.1063/1.356179
23.
23. T. P. Humphreys , P. K. Chiang , S. M. Bedair , and N. R. Parikh , Appl. Phys. Lett. 53, 142 (1988).
http://dx.doi.org/10.1063/1.100350
24.
24. S. M. Bedair , T. P. Humphreys , P. K. Chaing , and T. Katsuyama , MRS Proc. 90, 447 (1987).
http://dx.doi.org/10.1557/PROC-90-447
25.
25. L. Mayer , “ SIMNRA, a simulation program for the analysis of NRA, RBS and ERDA,” in Proceedings of 15th International Conference of Application Accelerators in Research and Industry, edited by J. L. Duggan and I. L. Morgan (1999), Vol. 475, p. 541.
26.
26. I. Vurgaftman , J. R. Meyer , and L. R. Ram-Mohan , J. Appl. Phys. 89, 5815 (2001).
http://dx.doi.org/10.1063/1.1368156
27.
27. M. J. Ashwin , R. J. H. Morris , D. Walker , P. A. Thomas , M. G. Dowsett , T. S. Jones , and T. D. Veal , J. Phys. D: Appl. Phys. 46, 264003 (2013).
http://dx.doi.org/10.1088/0022-3727/46/26/264003
28.
28. Y. Gu , K. Wang , H. Zhou , Y. Li , C. Cao , L. Zhang , Y. Zhang , Q. Gong , and S. Wang , Nano Res. Lett. 9, 24 (2014).
http://dx.doi.org/10.1186/1556-276X-9-24
29.
29. K. Y. Ma , Z. M. Fang , R. M. Cohen , and G. B. Stringfellow , J. Appl. Phys. 68, 4586 (1990).
http://dx.doi.org/10.1063/1.346166
30.
30. K. Alberi , J. Wu , W. Walukiewicz , K. M. Yu , O. D. Dubon , S. P. Watkins , C. X. Wang , X. Liu , Y.-J. Cho , and J. Furdyna , Phys. Rev. B 75, 045203 (2007).
http://dx.doi.org/10.1103/PhysRevB.75.045203
31.
31. M. Usman , C. A. Broderick , A. Lindsay , and E. P. O'Reilly , Phys. Rev. B 84, 245202 (2011).
http://dx.doi.org/10.1103/PhysRevB.84.245202
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/content/aip/journal/apl/105/21/10.1063/1.4902442
2014-11-24
2016-12-07

Abstract

The properties of molecular beam epitaxy-grown InSb Bi alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 m) for InSb to ∼88 meV (14.1 m) for InSb Bi, a reduction of ∼35 meV/%Bi.

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