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/content/aip/journal/apl/106/1/10.1063/1.4905448
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/content/aip/journal/apl/106/1/10.1063/1.4905448
2015-01-09
2016-12-06

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/deliver/fulltext/aip/journal/apl/106/1/1.4905448.html;jsessionid=AEUYqcwaU40sSmE1jQQ5BYuo.x-aip-live-03?itemId=/content/aip/journal/apl/106/1/10.1063/1.4905448&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=apl.aip.org/106/1/10.1063/1.4905448&pageURL=http://scitation.aip.org/content/aip/journal/apl/106/1/10.1063/1.4905448'
x100,x101,x102,x103,
Position1,Position2,Position3,
Right1,Right2,Right3,