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/content/aip/journal/apl/106/12/10.1063/1.4913687
2015-03-24
2016-05-29

Abstract

Spin-dependent transport properties of MnRuGa thin-films are studied as function of the Ru concentration and the substrate-induced strain. The large spontaneous Hall angle of 7.7% twenty times bigger than in other 3 metals is a signature of its half-metallicity. The compensation temperature where the magnetization of the two inequivalent antiferromagnetically coupled Mn sublattices cancel can be tuned by varying or the biaxial strain. This zero-moment half metal is free from demagnetizing forces and creates no stray field, effectively removing two obstacles to integrating magnetic elements in densely packed, nanometer-scale memory elements, and millimeter-wave generators.

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