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1. L. L. Chua, J. Zaumseil, J. F. Chang, E. C. W. Ou, P. K. H. Ho, H. Sirringhaus, and R. H. Friend, Nature 434, 194 (2005).
2. Z. R. He, N. Lopez, X. L. Chi, and D. W. Li, Org. Electron. 22, 191 (2015).
3. E. J. Meijer, D. M. De Leeuw, S. Setayesh, E. Van Veenendaal, B. H. Huisman, P. W. M. Blom, J. C. Hummelen, U. Scherf, and T. M. Klapwijk, Nat. Mater. 2, 678 (2003).
4. Z. R. He, J. H. Chen, Z. Z. Sun, G. Szulczewski, and D. W. Li, Org. Electron. 13, 1819 (2012).
5. T. Sakanoue and H. Sirringhaus, Nat. Mater. 9, 736 (2010).
6. Z. R. He, J. H. Chen, J. K. Keum, G. Szulczewski, and D. W. Li, Org. Electron. 15, 150 (2014).
7. J. H. Chen, M. Shao, K. Xiao, Z. R. He, D. W. Li, B. S. Lokitz, D. K. Hensley, S. M. Kilbey, J. E. Anthony, J. K. Keum, A. J. Rondinone, W. Y. Lee, S. Y. Hong, and Z. A. Bao, Chem. Mater. 25, 4378 (2013).
8. Z. R. He, K. Xiao, W. Durant, D. K. Hensley, J. E. Anthony, K. L. Hong, S. M. Kilbey, J. H. Chen, and D. W. Li, Adv. Funct. Mater. 21, 3617 (2011).
9. J. Smith, W. M. Zhang, R. Sougrat, K. Zhao, R. P. Li, D. K. Cha, A. Amassian, M. Heeney, I. McCulloch, and T. D. Anthopoulos, Adv. Mater. 24, 2441 (2012).
10. R. Hamilton, J. Smith, S. Ogier, M. Heeney, J. E. Anthony, I. McCulloch, J. Veres, D. D. C. Bradley, and T. D. Anthopoulos, Adv. Mater. 21, 1166 (2009).
11. N. Shin, J. Kang, L. J. Richter, V. M. Prabhu, R. J. Kline, D. A. Fischer, D. M. DeLongchamp, M. F. Toney, S. K. Satija, D. J. Gundlach, B. Purushothaman, J. E. Anthony, and D. Y. Yoon, Adv. Funct. Mater. 23, 366 (2013).
12. F. C. Chen and C. H. Liao, Appl. Phys. Lett. 93, 103310 (2008).
13. B. A. Jones, A. Facchetti, M. R. Wasielewski, and T. J. Marks, Adv. Funct. Mater. 18, 1329 (2008).
14. I. G. Lezama, M. Nakano, N. A. Minder, Z. H. Chen, F. V. Di Girolamo, A. Facchetti, and A. F. Morpurgo, Nat. Mater. 11, 788 (2012).
15. A. S. Molinari, H. Alves, Z. Chen, A. Facchetti, and A. F. Morpurgo, J. Am. Chem. Soc. 131, 2462 (2009).
16. N. A. Minder, S. Ono, Z. H. Chen, A. Facchetti, and A. F. Morpurgo, Adv. Mater. 24, 503 (2012).
17. J. Soeda, T. Uemura, Y. Mizuno, A. Nakao, Y. Nakazawa, A. Facchetti, and J. Takeya, Adv. Mater. 23, 3681 (2011).
18. C. Piliego, D. Jarzab, G. Gigli, Z. H. Chen, A. Facchetti, and M. A. Loi, Adv. Mater. 21, 1573 (2009).
19. Z. R. He, D. W. Li, D. K. Hensley, A. J. Rondinone, and J. H. Chen, Appl. Phys. Lett. 103, 113301 (2013).
20. J. O. Lee, C. Park, J. J. Kim, J. Kim, J. W. Park, and K. H. Yoo, J. Phys. D: Appl. Phys. 33, 1953 (2000).
21. S. Fabiano, H. Wang, C. Piliego, C. Jaye, D. A. Fischer, Z. H. Chen, B. Pignataro, A. Facchetti, Y. L. Loo, and M. A. Loi, Adv. Funct. Mater. 21, 4479 (2011).
22.See supplementary material at for cross-section SEM and polarized optical images of the PDIF-CN2 films with different polymers.[Supplementary Material]
23. J. H. Kwon, I. M. Kang, and J. H. Bae, Eur. Phys. J.: Appl. Phys. 65, 30202 (2014).
24. D. W. Li, E. J. Borkent, R. Nortrup, H. Moon, H. Katz, and Z. N. Bao, Appl. Phys. Lett. 86, 042105 (2005).
25. J. Rivnay, L. H. Jimison, J. E. Northrup, M. F. Toney, R. Noriega, S. F. Lu, T. J. Marks, A. Facchetti, and A. Salleo, Nat. Mater. 8, 952 (2009).

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-11-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN) is an -type semiconductor exhibiting high electron mobility and excellent air stability. However, the reported electron mobility based on spin-coated PDIF-CN film is much lower than the value of PDIF-CN single crystals made from vapor phase deposition, indicating significant room for mobility enhancement. In this study, various insulating polymers, including poly(vinyl alcohol), poly(methyl methacrylate) (PMMA), and poly(alpha-methylstyrene) (PαMS), are pre-coated on silicon substrate aiming to enhance the morphology of the PDIF-CN thin film, thereby improving the charge transport and air stability. Atomic force microscopy images reveal that with the pre-deposition of PαMS or PMMA polymers, the morphology of the PDIF-CN polycrystalline films is optimized in semiconducting crystal connectivity, domain size, and surface roughness, which leads to significant improvement of organic thin-film transistor (OTFT) performance. Particularly, an electron mobility of up to 0.55 cm2/V s has been achieved from OTFTs based on the PDIF-CN film with the pre-deposition of PαMS polymer.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd