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/content/aip/journal/apl/106/18/10.1063/1.4919923
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/content/aip/journal/apl/106/18/10.1063/1.4919923
2015-05-07
2016-12-05

Abstract

Transition metal dichalcogenides such as the semiconductor MoS are a class of two-dimensional crystals. The surface morphology and quality of MoS grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moiré patterns from several triangular MoS islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge.

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