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1. H. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004).
2. E. M. C. Fortunato, L. M. N. Pereira, P. M. C. Barquinha, A. M. Botelho do Rego, G. Gonçalves, A. Vilà, J. R. Morante, and R. F. P. Martins, Appl. Phys. Lett. 92, 222103 (2008).
3. J. Y. Choi, S. S. Kim, and S. Y. Lee, J. Nanosci. Nanotechnol. 13, 7089 (2013).
4. S. Y. Oh, C. G. Ahn, J. H. Yang, W. J. Cho, W. H. Lee, H. M. Koo, and S. J. Lee, Solid-State Electron. 52, 372 (2008).
5. P. T. Liu, Y. T. Chou, L. F. Teng, and C. S. Fuh, Appl. Phys. Lett. 97, 083505 (2010).
6. Y. Chen and S. Wagner, Appl. Phys. Lett. 75, 1125 (1999).
7. Dhananjay, C. W. Chu, C. W. Ou, M. C. Wu, Z. Y. Ho, K. C. Ho, and S. W. Lee, Appl. Phys. Lett. 92, 232103 (2008).
8. M. S. Oh, K. M. Lee, K. H. Lee, S. H. Cha, J. M. Choi, B. H. Lee, M. M. Sung, and S. I. Im, Adv. Funct. Mater. 19, 726 (2009).
9. D. C. Look and B. Claflin, Phys. Stat. Sol. B 241(3), 624 (2004).
10. H. X. Yin, S. I. Kim, J. C. Park, I. H. Song, S. W. Kim, J. H. Hur, S. H. Park, S. H. Jeon, and C. J. Kim, IEEE Int. Electron Devices Meet. 2009, 199202.
11. K. M. Lee, J. M. Jang, S. J. Choi, D. M. Kim, K. R. Kim, and D. H. Kim, IEEE Trans. Eelctron. Devices 62(5), 1504 (2015).
12. Y. F. Chen, D. Geng, M. Mativenga, H. S. Nam, and J. Jang, IEEE Electron Device Lett. 36(2), 153155 (2015).
13. I. C. Chiu, Y. S. Li, M. S. Tu, and I. C. Cheng, IEEE Electron Device Lett. 35(12), 12631265 (2014).
14. H. Wang, J. Cuppens, E. Biermans, S. Bals, L. Fernandez-Ballester, K. O. Kvashnina, W. Bras, M. J. Van Bael, K. Temst, and A. Vantomme, J. Phys. D: Appl. Phys. 45, 035301 (2012).
15. P. B. Shea and J. Kanicki, J. Appl. Phys. 98, 014503 (2005).
16. E. N. K. Cho, J. H. Kang, and I. G. Yun, Microelectron. Reliab. 51, 1792 (2011).
17. J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, and C. J. Kim, Appl. Phys. Lett. 93, 033513 (2008).
18. J. M. Lee, I. T. Cho, J. H. Lee, and H. I. Kwon, Jpn. J. Appl. Phys. 48, 100202 (2009).
19. P. C. Debnath and S. Y. Lee, Appl. Phys. Lett. 101, 092103 (2012).

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A high performance inverter consisting of amorphous zinc-tin-oxide (a-ZTO) thin film transistor (TFT) with enhancement mode and amorphous silicon-zinc-tin-oxide (a-SZTO) TFT with depletion mode has been fabricated by using only n-type metal-oxide thin film transistors. The turn on voltages of ZTO and SZTO TFTs showed positive value of 1.17 V and negative value of −5 V, respectively. High voltage gain of about 25 has been obtained by using implemented inverter with good switching characteristics even with all n-type thin film transistors.


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