Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/apl/106/21/10.1063/1.4921791
1.
1. H. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004).
http://dx.doi.org/10.1038/nature03090
2.
2. E. M. C. Fortunato, L. M. N. Pereira, P. M. C. Barquinha, A. M. Botelho do Rego, G. Gonçalves, A. Vilà, J. R. Morante, and R. F. P. Martins, Appl. Phys. Lett. 92, 222103 (2008).
http://dx.doi.org/10.1063/1.2937473
3.
3. J. Y. Choi, S. S. Kim, and S. Y. Lee, J. Nanosci. Nanotechnol. 13, 7089 (2013).
http://dx.doi.org/10.1166/jnn.2013.7632
4.
4. S. Y. Oh, C. G. Ahn, J. H. Yang, W. J. Cho, W. H. Lee, H. M. Koo, and S. J. Lee, Solid-State Electron. 52, 372 (2008).
http://dx.doi.org/10.1016/j.sse.2007.10.020
5.
5. P. T. Liu, Y. T. Chou, L. F. Teng, and C. S. Fuh, Appl. Phys. Lett. 97, 083505 (2010).
http://dx.doi.org/10.1063/1.3483616
6.
6. Y. Chen and S. Wagner, Appl. Phys. Lett. 75, 1125 (1999).
http://dx.doi.org/10.1063/1.124617
7.
7. Dhananjay, C. W. Chu, C. W. Ou, M. C. Wu, Z. Y. Ho, K. C. Ho, and S. W. Lee, Appl. Phys. Lett. 92, 232103 (2008).
http://dx.doi.org/10.1063/1.2936275
8.
8. M. S. Oh, K. M. Lee, K. H. Lee, S. H. Cha, J. M. Choi, B. H. Lee, M. M. Sung, and S. I. Im, Adv. Funct. Mater. 19, 726 (2009).
http://dx.doi.org/10.1002/adfm.200801155
9.
9. D. C. Look and B. Claflin, Phys. Stat. Sol. B 241(3), 624 (2004).
http://dx.doi.org/10.1002/pssb.200304271
10.
10. H. X. Yin, S. I. Kim, J. C. Park, I. H. Song, S. W. Kim, J. H. Hur, S. H. Park, S. H. Jeon, and C. J. Kim, IEEE Int. Electron Devices Meet. 2009, 199202.
http://dx.doi.org/10.1109/IEDM.2009.5424389
11.
11. K. M. Lee, J. M. Jang, S. J. Choi, D. M. Kim, K. R. Kim, and D. H. Kim, IEEE Trans. Eelctron. Devices 62(5), 1504 (2015).
http://dx.doi.org/10.1109/TED.2015.2413941
12.
12. Y. F. Chen, D. Geng, M. Mativenga, H. S. Nam, and J. Jang, IEEE Electron Device Lett. 36(2), 153155 (2015).
http://dx.doi.org/10.1109/LED.2014.2379700
13.
13. I. C. Chiu, Y. S. Li, M. S. Tu, and I. C. Cheng, IEEE Electron Device Lett. 35(12), 12631265 (2014).
http://dx.doi.org/10.1109/LED.2014.2364578
14.
14. H. Wang, J. Cuppens, E. Biermans, S. Bals, L. Fernandez-Ballester, K. O. Kvashnina, W. Bras, M. J. Van Bael, K. Temst, and A. Vantomme, J. Phys. D: Appl. Phys. 45, 035301 (2012).
http://dx.doi.org/10.1088/0022-3727/45/3/035301
15.
15. P. B. Shea and J. Kanicki, J. Appl. Phys. 98, 014503 (2005).
http://dx.doi.org/10.1063/1.1949713
16.
16. E. N. K. Cho, J. H. Kang, and I. G. Yun, Microelectron. Reliab. 51, 1792 (2011).
http://dx.doi.org/10.1016/j.microrel.2011.07.018
17.
17. J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, and C. J. Kim, Appl. Phys. Lett. 93, 033513 (2008).
http://dx.doi.org/10.1063/1.2963978
18.
18. J. M. Lee, I. T. Cho, J. H. Lee, and H. I. Kwon, Jpn. J. Appl. Phys. 48, 100202 (2009).
http://dx.doi.org/10.1143/JJAP.48.100202
19.
19. P. C. Debnath and S. Y. Lee, Appl. Phys. Lett. 101, 092103 (2012).
http://dx.doi.org/10.1063/1.4747800
http://aip.metastore.ingenta.com/content/aip/journal/apl/106/21/10.1063/1.4921791
Loading
/content/aip/journal/apl/106/21/10.1063/1.4921791
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/106/21/10.1063/1.4921791
2015-05-27
2016-10-01

Abstract

A high performance inverter consisting of amorphous zinc-tin-oxide (a-ZTO) thin film transistor (TFT) with enhancement mode and amorphous silicon-zinc-tin-oxide (a-SZTO) TFT with depletion mode has been fabricated by using only n-type metal-oxide thin film transistors. The turn on voltages of ZTO and SZTO TFTs showed positive value of 1.17 V and negative value of −5 V, respectively. High voltage gain of about 25 has been obtained by using implemented inverter with good switching characteristics even with all n-type thin film transistors.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/106/21/1.4921791.html;jsessionid=t67VmynE8Z8KHugZtC5RIVrN.x-aip-live-03?itemId=/content/aip/journal/apl/106/21/10.1063/1.4921791&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=apl.aip.org/106/21/10.1063/1.4921791&pageURL=http://scitation.aip.org/content/aip/journal/apl/106/21/10.1063/1.4921791'
x100,x101,x102,x103,
Position1,Position2,Position3,
Right1,Right2,Right3,