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This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan ®SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of −1.4 V (operating voltage: 0 to −4 V) together with a mobility of 1.9 cm2 V−1s−1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (κ ∼ 20.02), a low interfacial trap density (2.56 × 1011cm−2), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234 nm.


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