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Appropriate-amount Si-doping in the well layers significantly improved the luminescence efficiency of Al GaN/AlGaN multiple quantum wells. To understand the mechanisms, spatio-time-resolved cathodoluminescence measurements and self-consistent Schrödinger-Poisson calculations were carried out. The increase in the luminescence lifetime at room temperature, which reflects the decrease in the concentration of nonradiative recombination centers (NRCs), was correlated with increased terrace width of Si-doped wells. The results suggest the importance of HSiNH doping-reactant formation that gives rise to enhanced decomposition of NH and provides wetting conditions by surface Si-N bonds, which reduce the total energy and concentration of NRCs composed of cation vacancies.


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