Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. I. Kang, H.-J. Yun, D. S. Chung, S.-K. Kwon, and Y.-H. Kim, J. Am. Chem. Soc. 135, 14896 (2013).
2. G. Kim, S.-J. Kang, G. K. Dutta, Y.-K. Han, T. J. Shin, Y.-Y. Noh, and C. Yang, J. Am. Chem. Soc. 136, 9477 (2014).
3. J. Li, Y. Zhao, H. S. Tan, Y. Guo, C.-A. Di, G. Yu, Y. Liu, M. Lin, S. H. Lim, Y. Zhou, H. Su, and B. S. Ong, Sci. Rep. 2, 754 (2012).
4. H. Chen, Y. Guo, Y. Zhao, J. Zhang, D. Gao, H. Liu, and Y. Liu, Adv. Mater. 24, 4618 (2012).
5. K. H. Park, K. H. Cheon, Y.-J. Lee, D. S. Chung, S.-K. Kwon, and Y.-H. Kim, Chem. Commun. 51, 8120 (2015).
6. J. Mei, H.-C. Wu, Y. Diao, A. Appleton, H. Wang, Y. Zhou, W.-Y. Lee, T. Kurosawa, W.-C. Chen, and Z. Bao, Adv. Funct. Mater. 25, 3455 (2015).
7. R. Kim, P. S. K. Amegadze, I. Kang, H.-J. Yun, Y.-Y. Noh, S.-K. Kwon, and Y.-H. Kim, Adv. Funct. Mater. 23, 5719 (2013).
8. H. Sirringhaus, Adv. Mater. 26, 1319 (2014).
9. D. T. Duong, C. Wang, E. Antono, M. F. Toney, and A. Salleo, Org. Electron. 14, 1330 (2013).
10. L. Ma, W. H. Lee, Y. D. Park, J. S. Kim, H. S. Lee, and K. Cho, Appl. Phys. Lett. 92, 063310 (2008).
11. I. D. V. Ingram, D. J. Tate, A. V. S. Parry, R. S. Sprick, and M. L. Turner, Appl. Phys. Lett. 104, 153304 (2014).
12. J. E. Cochrans, M. J. N. Junk, A. M. Glaudell, P. L. Miller, J. S. Cowart, M. F. Toney, C. J. Hawker, B. F. Chmelka, and M. L. Chabinyc, Macromolecules 47, 6836 (2014).
13. P. Pingel and D. Neher, Phys. Rev. B 87, 115209 (2013).
14. C. B. Nielsen, M. Turbiez, and I. McCulloch, Adv. Mater. 25, 1859 (2013).
15. K. H. Hendriks, G. H. L. Heintges, V. S. Gevaerts, M. M. Wienk, and R. A. J. Janssen, Angew. Chem. Int. Ed. 52, 8341 (2013).
16. Z. Q. Gao, B. X. Mi, G. Z. Xu, Y. Q. Wan, M. L. Gong, K. W. Cheah, and C. H. Chen, Chem. Commun. 2008(1), 117.
17. H. Sirringhaus, Adv. Mater. 17, 2411 (2005).
18. B. Lüssem, M. Riede, and K. Leo, Phys. Status Solidi A 210, 9 (2013).
19. X. Zhang, H. Bronstein, A. J. Kronemeijer, J. Smith, Y. Kim, R. J. Kline, L. J. Richter, T. D. Anthopoulos, H. Sirringhaus, K. Song, M. Heeney, W. Zhang, I. McCulloch, and D. M. DeLongchamp, Nat. Commun. 4, 2238 (2013).
20. R. Noriega, J. Rivnay, K. Vandewal, F. P. V. Koch, N. Stingelin, P. Smith, M. F. Toney, and A. Salleo, Nat. Mater. 12, 1038 (2013).
21. J. Cho, Y. Ko, K. H. Cheon, H.-J. Yun, H.-K. Lee, S.-K. Kwon, Y.-H. Kim, S. T. Chang, and D. S. Chung, J. Mater. Chem. C 3, 2817 (2015).
22. H. Chen, Y. Guo, Z. Mao, D. Gao, and G. Yu, J. Polym. Sci. A Polym. Chem. 52, 1970 (2014).
23. J. Rivnay, S. C. B. Mannsfeld, C. E. Miller, A. Salleo, and M. F. Toney, Chem. Rev. 112, 5488 (2012).
24. G. Horowitz, R. Hajlaoui, and F. Kouki, Eur. Phys. J. AP 1, 361 (1998).
25. G. Horowitz, F. Garnier, A. Yassar, R. Hajlaoui, and F. Kouki, Adv. Mater. 8, 52 (1996).
26. S. Park, J. Cho, M. J. Ko, D. S. Chung, and H. J. Son, Macromolecules 48, 3883 (2015).
27. B. W. D'Andrade, S. Datta, S. R. Forrest, P. Djurovich, E. Polikarpov, and M. E. Thompson, Org. Electron. 6, 11 (2005).

Data & Media loading...


Article metrics loading...



The effects of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) doping on diketopyrrolo-pyrrole-based polymeric semiconductors in terms of charge transport behavior and structural ordering are systematically investigated. Although the energy level offset between the polymeric semiconductor and the F4TCNQ acceptor was not particularly large, ultraviolet photoelectron spectroscopy analyses revealed that a low doping ratio of 1 wt. % is sufficient to tune the energy distance between the Fermi level and the HOMO level, reaching saturation at roughly 5 wt. %, which is further confirmed by the depletion mode measurements of field effect transistors (FETs). Structural analyses using grazing-incidence X-ray diffraction (GIXD) show that the overall degree of edge-on orientation is disturbed by the addition of dopants, with significant influence appearing at high doping ratios (>3 wt. %). The calculated charge carrier mobility from accumulation mode measurements of FETs showed a maximum value of 2 cm2/V·s at the optimized doping ratio of 1%, enabled by additional holes in the channel region, which results in a roughly 40% increase relative to the undoped device. Further increases in the doping ratio, however, resulted in worse FET performance, which can be attributed to structural deformation. This result suggests that the electrochemical doping method can be also applied to donor-acceptor copolymers to further enhance their charge transport characteristics, once the optimized doping condition has been established.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd