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/content/aip/journal/apl/107/20/10.1063/1.4935988
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/content/aip/journal/apl/107/20/10.1063/1.4935988
2015-11-17
2016-09-29

Abstract

We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electrostatic configuration, we relate the current to three distinct tunable voltages across the system and hence produce a two-dimensional map of the I-V characteristics in the low energy regime. We show that the use of gates on either side of the heterostructure offers a fine degree of control over the device's rich array of characteristics, as does varying the twist between the grapheneelectrodes.

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