No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
15. S. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. ( John Wiley & Sons, Inc., Hoboken, NJ, USA, 2006).
20. S. Singh, S. K. Mohapatra, A. Sharma, C. Fuentes-Hernandez, S. Barlow, S. R. Marder, and B. Kippelen, Appl. Phys. Lett. 102, 153303 (2013).
22. F. Ante, D. Kälblein, U. Zschieschang, T. W. Canzler, A. Werner, K. Takimiya, M. Ikeda, T. Sekitani, T. Someya, and H. Klauk, Small 7, 1186 (2011).
Article metrics loading...
The interest in vertical organic transistors as a means to overcome the limitations of conventional organic field-effect transistors(OFETs) has been growing steadily in recent years. Current vertical architectures, however, often suffer from a lack of parameter control, as they are limited to certain materials and processing techniques, making a controlled shift of, e.g., the transistor threshold voltage difficult. In this contribution, we present a vertical OFET (VOFET) operating in the inversion regime. By varying the thickness or doping concentration of a p-doped layer in an otherwise n-type VOFET, we are able to shift the threshold voltage in a controlled manner from 1.61 V (for a normal n-type VOFET) to 4.83 V (for the highest doping concentration of 50 mol. %). Furthermore, it is found that low doping concentrations of 20 mol. % can improve the Off state of the VOFET through reduction of the source-drain leakage current.
Full text loading...
Most read this month