Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, Nano Lett. 3, 193 (2003).
2. C. M. Aguirre, P. L. Levesque, M. Paillet, F. Lapointe, B. C. St-Antoine, P. Desjardins, and R. Martel, Adv. Mater. 21, 3087 (2009).
3. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and Ph. Avouris, Phys. Rev. Lett. 87, 256805 (2001).
4. Z. H. Chen, J. Appenzeller, Y. M. Lin, J. Sippel-Oakley, A. G. Rinzler, J. Y. Tang, S. J. Wind, P. M. Solomon, and Ph. Avouris, Science 311, 1735 (2006).
5. Z. Y. Zhang, S. Wang, Z. X. Wang, L. Ding, T. Pei, Z. D. Hu, X. L. Liang, Q. Chen, Y. Li, and L. M. Peng, ACS Nano 3, 3781 (2009).
6. L. Ding, Z. Y. Zhang, S. B. Liang, T. Pei, S. Wang, Y. Li, W. W. Zhou, J. Liu, and L. M. Peng, Nat. Commun. 3, 677 (2012).
7. Q. Qian, G. Li, Y. Jin, J. Liu, Y. Zou, K. Jiang, S. Fan, and Q. Li, ACS Nano 8, 9597 (2014).
8. M. Qu, H. Li, R. Liu, S.-L. Zhang, and Z.-J. Qiu, Nat. Commun. 5, 3185 (2014).
9. W. Liu, K. Chikkadi, S.-W. Lee, C. Hierold, and M. Haluska, Sens. Actuators, B 198, 479 (2014).
10. T.-J. Ha, D. Kiriya, K. Chen, and A. Javey, ACS Appl. Mater. Interfaces 6, 8441 (2014).
11. H. Wang, B. Cobb, A. van Breemen, G. Gelinck, and Z. Bao, Adv. Mater. 26, 4588 (2014).
12. S. Jang, B. Kim, M. L. Geier, P. L. Prabhumirashi, M. C. Hersam, and A. Dodabalapur, Appl. Phys. Lett. 105, 122107 (2014).
13. S.-H. Hur, M.-H. Yoon, A. Gaur, M. Shim, A. Facchetti, T. J. Marks, and J. A. Rogers, J. Am. Chem. Soc. 127, 13808 (2005).
14. H. Shimauchi, Y. Ohno, S. Kishimoto, and T. Mizutani, Jpn. J. Appl. Phys., Part 1 45, 5501 (2006).
15. S. A. McGill, S. G. Rao, P. Manandhar, P. Xiong, and S. Hong, Appl. Phys. Lett. 89, 163123 (2006).
16. Q. Cao, M.-G. Xia, M. Shim, and J. A. Rogers, Adv. Funct. Mater. 16, 2355 (2006).
17. P. Hu, C. Zhang, A. Fasoli, V. Scardaci, S. Pisana, T. Hasan, J. Robertson, W. I. Milne, and A. C. Ferrari, Physica E 40, 2278 (2008).
18. V. K. Sangwan, R. P. Ortiz, J. M. P. Alaboson, J. D. Emery, M. J. Bedzyk, L. J. Lauhon, T. J. Marks, and M. C. Hersam, ACS Nano 6, 7480 (2012).
19. S. H. Jin, A. E. Islam, T.-I. Kim, J.-H. Kim, M. A. Alam, and J. A. Rogers, Adv. Funct. Mater. 22, 2276 (2012).
20. Z. Liu, H. Li, Z. Qiu, S.-L. Zhang, and Z.-B. Zhang, Adv. Mater. 24, 3633 (2012).
21. J. Tittmann, S. Hermann, S. E. Schulz, A. Pacheco-Sanchez, M. Claus, and M. Schröter, in Proceedings of the IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) (2014), p. 137.
22. Z. Liu, X. Gao, Z. Zhu, Z. Qiu, D. Wu, Z.-B. Zhang, and S.-L. Zhang, IEEE Trans. Electron Devices 60, 2542 (2013).
23. A. D. Franklin, G. S. Tulevski, S.-J. Han, D. Shahrjerdi, Q. Cao, H.-Y. Chen, H.-S. Wong, and W. Haensch, ACS Nano 6, 1109 (2012).
24. J. Ding, Z. Li, J. Lefebvre, F. Cheng, J. L. Dunford, P. R. L. Malenfant, J. Humes, and J. Kroeger, Nanoscale 7, 15741 (2015). sc-SWCNT dispersions with equivalent specifications are commercially available from NanoIntegris under the brand name IsoSol-S100.
25. J. Ding, Z. Li, J. Lefebvre, F. Cheng, G. Dubey, S. Zou, P. Finnie, A. Hrdina, L. Scoles, G. P. Lopinski, C. T. Kingston, B. Simard, and P. R. L. Malenfant, Nanoscale 6, 2328 (2014).
26.Number supplied on the manufacturer specification sheet.
27. Y. Wu, Y. Wang, P. Liu, N.-X. Hu, A., and J. Wigglesworth, U.S. patent 8,821,962 (Sept 2, 2014).
29.See supplementary material at for schematic of aerosol deposition system (Fig. S1), transistor layout and process of fabrication (Fig. S2), SWCNT network morphology (Fig. S3), and a table summarizing transistor performance including mobility, threshold voltage, and hysteresis (Table S1).[Supplementary Material]
30. P. Finnie, J. Ding, Z. Li, and C. T. Kingston, J. Phys. Chem. C 118, 30127 (2014).
31. Z. Li, J. Ding, P. Finnie, J. Lefebvre, F. Cheng, C. T. Kingston, and P. R. L. Malenfant, Nano Res. 8, 2179 (2015).
32. Z. Li, J. Ding, J. Lefebvre, and P. R. L. Malenfant, Org. Electron. 26, 15 (2015).
33. I. S. Esqueda, C. D. Cress, Y. Che, Y. Cao, and C. Zhou, J. Appl. Phys. 115, 054506 (2014).
34. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, and W. Weber, J. Appl. Phys. 92, 5259 (2002).
35. C. Kim, Z. Wang, H.-J. Choi, Y.-G. Ha, A. Facchetti, and T. J. Marks, J. Am. Chem. Soc. 130, 6867 (2008).
36. M. E. Roberts, M. C. LeMieux, A. N. Sokolov, and Z. Bao, Nano Lett. 9, 2526 (2009).
37. K.-J. Baeg, Y.-Y. Noh, and D.-Y. Kim, Solid-State Electron. 53, 1165 (2009).
38. A. F. Diaza and R. M. Felix-Navarro, J. Electrost. 62, 277 (2004).
39. M. H. Jung, J. Kim, J. Noh, N. Lim, C. Lim, G. Lee, J. Kim, H. Kang, K. Jung, A. Leonard, J. M. Tour, and G. Cho, IEEE Trans. Electron Devices 57, 571 (2010).
40. M. Jung, J. Kim, H. Koo, W. Lee, V. Subramanian, and G. Cho, J. Nanosci. Nanotechnol. 14, 1303 (2014).
41. J. Noh, M. Jung, Y. Jung, C. Yeom, M. Pyo, and G. Cho, Proc. IEEE 103, 554 (2015).

Data & Media loading...


Article metrics loading...



We present two examples of carbon nanotube network thin film transistors with strongly hydrophobicdielectrics comprising either Teflon-AF or a poly(vinylphenol)/poly(methyl silsesquioxane) (PVP/pMSSQ) blend. In the absence of encapsulation, bottom gated transistors in air ambient show no hysteresis between forward and reverse gate sweep direction. Device threshold gate voltage and On-current present excellent time dependent stability even under dielectric stress. Furthermore, threshold gate voltage for hole conduction is negative upon device encapsulation with PVP/pMSSQ enabling much improved current On/Off ratio at 0 V. This work addresses two major challenges impeding solution based fabrication of relevant thin film transistors with printable single-walled carbon nanotube channels.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd