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Experimental determination of tunneling characteristics and dwell times from temperature dependence of Al/Al2
14. D. Shafir, H. Soifer, B. D. Bruner, M. Dagan, Y. Mairesse, S. Patchkovskii, M. Y. Ivanov, O. Smirnova, and N. Dudovich, Nature 485, 343 (2012);
16. S. Carmona-Tellez, J. Guzman-Mendoza, M. Aguilar-Frutis, G. Alarcon-Flores, M. Garcia-Hipolito, M. A. Canseco, and C. Falcony, J. Appl. Phys. 103, 034105 (2008).
17.Note that the current density is proportional to Φ0/s2 making it more sensitive to the s parameter variations rather than Φ0.
20.Note that this values are very similar to the ones obtained for other semiconductors in Ref. 19.
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Measurements of current-voltage (I-V) characteristics of a high quality Al/Al2O3/Al junction at temperatures ranging from 3.5 K to 300 K have been used to extract the barrier properties. Fitting results using Simmons's model led to a constant value of barrier width s ∼ 20.8 Å and a continuous increase in the barrier height with decreasing temperature. The latter is used to determine the energyband gaptemperature dependence and average phonon frequency ω = 2.05 × 1013 s−1 in Al2O3, which adds confidence to the precision of our measurements. The barrier parameters are used to extract the temperature dependent dwell times in tunneling (τD = 3.6 × 10−16 s at mid-barrier energies) and locate resonances above the barrier.
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