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Erratum: “Effects of localization on hot carriers in InAs/AlAs
quantum wells” [Appl. Phys. Lett. 106
, 061902 (2015)]
1. J. Tang, V. R. Whiteside, H. Esmaielpour, S. Vijeyaragunathan, T. D. Mishima, M. B. Santos, and I. R. Sellers, Appl. Phys. Lett. 106, 061902 (2015).
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