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33.See supplementary material at http://dx.doi.org/10.1063/1.4927651 for S1: Band Diagrams determined by Photoelectron Yield Spectra, S2: X-ray diffraction measurements of BP2T thin films on PMMA-SiO2 and on TTC-SiO2, and S3: SEM analysis.[Supplementary Material]
http://aip.metastore.ingenta.com/content/aip/journal/apl/107/4/10.1063/1.4927651
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/content/aip/journal/apl/107/4/10.1063/1.4927651
2015-07-29
2016-12-05

Abstract

Carrier injection from Au electrodes to organic thin-film active layers can be greatly improved for both electrons and holes by nano-structural surface control of organic semiconducting thin films using long-chain aliphatic molecules on a SiO gate insulator. In this paper, we demonstrate a stark contrast for a 2,5-bis(4-biphenylyl)bithiophene (BP2T) active semiconducting layer grown on a modified SiO dielectric gate insulator between two different modifications of tetratetracontane and poly(methyl methacrylate) thin films. Important evidence that the field effect transistor (FET) characteristics are independent of electrode metals with different work functions is given by the observation of a conversion of the metal-semiconductor contact from the Schottky limit to the Bardeen limit. An air-stable light emitting FET with an Au electrode is demonstrated.

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