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The complementary resistive switching (CRS) characteristics using an IrO/GdO/AlO/TiN single cell are observed whereas the bipolar resistive switching (BRS) characteristics are observed for the IrO/GdO/TiN structure. Transmission electron microscope and energy dispersive X-ray spectroscopy depth profile show crystalline GdO film and the presence of higher amount of oxygen at both IrO/GdO interface and AlO layer. Inserting thin AlO layer, the BRS is changed to CRS. This CRS has hopping distance of 0.58 nm and Poole-Frenkel current conductions for the “0” and “1” states, respectively. A schematic model using oxygen vacancy filament formation/rupture at the TE/GdO interface and AlO layer has been illustrated. This CRS device has good endurance of 1000 cycles with a pulse width of 1 s, which is very useful for future crossbar architecture.


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