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/content/aip/journal/apl/108/13/10.1063/1.4944999
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/content/aip/journal/apl/108/13/10.1063/1.4944999
2016-03-28
2016-12-09

Abstract

A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.

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