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Erratum: “Charge trapping at the MoS2
interface and its effects on the characteristics of MoS2
metal-oxide-semiconductor field effect transistors” [Appl. Phys. Lett. 106
, 103109 (2015)]
Y. Guo, X. Wei, J. Shu, B. Liu, J. Yin, C. Guan, Y. Han, S. Gao, and Q. Chen, Appl. Phys. Lett. 106, 103109 (2015).
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