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/content/aip/journal/apl/108/7/10.1063/1.4942093
2016-02-16
2016-12-04

Abstract

We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of fluorine doping of atomic layer deposition AlO. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm−3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm−2 to −6.60 × 1012 cm−2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices.

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/deliver/fulltext/aip/journal/apl/108/7/1.4942093.html;jsessionid=wh0uUEBZQnRSjAlo14rYULLR.x-aip-live-03?itemId=/content/aip/journal/apl/108/7/10.1063/1.4942093&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=apl.aip.org/108/7/10.1063/1.4942093&pageURL=http://scitation.aip.org/content/aip/journal/apl/108/7/10.1063/1.4942093'
x100,x101,x102,x103,
Position1,Position2,Position3,
Right1,Right2,Right3,