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/content/aip/journal/apl/109/10/10.1063/1.4962273
2016-09-06
2016-09-27

Abstract

Stranski-Krastanov (SK) growth of InGa Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 109 to 2 × 1011 cm−2 depending on material deposition and Sb-flush time. When InGa Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.

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