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1.
M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, and H. von Wenckstern, Phys. Status Solidi A 207(6), 14371449 (2010).
http://dx.doi.org/10.1002/pssa.200983771
2.
H. Hosono, Thin Solid Films 515(15), 60006014 (2007).
http://dx.doi.org/10.1016/j.tsf.2006.12.125
3.
M. Baldini, M. Albrecht, D. Gogova, R. Schewski, and G. Wagner, Semicond. Sci. Technol. 30(2), 024013 (2015).
http://dx.doi.org/10.1088/0268-1242/30/2/024013
4.
F. B. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. X. Guo, J. Cryst. Growth 387, 96100 (2014).
http://dx.doi.org/10.1016/j.jcrysgro.2013.11.022
5.
H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, and Y. Yaguchi, Jpn. J. Appl. Phys., Part 1 47(11), 85068509 (2008).
http://dx.doi.org/10.1143/JJAP.47.8506
6.
Y. Tomm, P. Reiche, D. Klimm, and T. Fukuda, J. Cryst. Growth 220(4), 510514 (2000).
http://dx.doi.org/10.1016/S0022-0248(00)00851-4
7.
N. Ueda, H. Hosono, R. Waseda, and H. Kawazoe, Appl. Phys. Lett. 70(26), 3561 (1997).
http://dx.doi.org/10.1063/1.119233
8.
E. G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, and K. Aoki, Appl. Phys. Lett. 92(20), 202120 (2008).
http://dx.doi.org/10.1063/1.2919728
9.
Y. Tomm, J. M. Ko, A. Yoshikawa, and T. Fukuda, Sol. Energy Mater. Sol. Cells 66(1–4), 369374 (2001).
http://dx.doi.org/10.1016/S0927-0248(00)00196-3
10.
M. Fleischer, W. Hanrieder, and H. Meixner, Thin Solid Films 190(1), 93102 (1990).
http://dx.doi.org/10.1016/0040-6090(90)90132-W
11.
L. Jianjun, Y. Jinliang, S. Liang, and L. Ting, J. Semicond. 31(10), 103001 (2010).
http://dx.doi.org/10.1088/1674-4926/31/10/103001
12.
Y. Zhang, J. Yan, Q. Li, C. Qu, L. Zhang, and T. Li, Phys. B 406(15–16), 30793082 (2011).
http://dx.doi.org/10.1016/j.physb.2011.05.011
13.
C.-Y. Huang, R.-H. Horng, D.-S. Wuu, L.-W. Tu, and H.-S. Kao, Appl. Phys. Lett. 102(1), 011119 (2013).
http://dx.doi.org/10.1063/1.4773247
14.
D. Shinohara and S. Fujita, Jpn. J. Appl. Phys., Part 1 47(9), 73117313 (2008).
http://dx.doi.org/10.1143/JJAP.47.7311
15.
A. Ortiz, J. C. Alonso, E. Andrade, and C. Urbiola, J. Electrochem. Soc. 148(2), F26 (2001).
http://dx.doi.org/10.1149/1.1342183
16.
Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, Appl. Phys. Lett. 90(3), 031912 (2007).
http://dx.doi.org/10.1063/1.2432946
17.
A. A. Dakhel and W. E. Alnaser, Microelectron. Reliab. 53(5), 676680 (2013).
http://dx.doi.org/10.1016/j.microrel.2013.01.010
18.
S. Nakagomi and Y. Kokubun, J. Cryst. Growth 349(1), 1218 (2012).
http://dx.doi.org/10.1016/j.jcrysgro.2012.04.006
19.
T. Oshima, T. Okuno, and S. Fujita, Jpn. J. Appl. Phys., Part 1 46(11), 72177220 (2007).
http://dx.doi.org/10.1143/JJAP.46.7217
20.
T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, Appl. Phys. Express 1(1), 011202 (2008).
http://dx.doi.org/10.1143/APEX.1.011202
21.
M. Higashiwaki, K. Sasaki, T. Kamimura, M. Hoi Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett. 103(12), 123511 (2013).
http://dx.doi.org/10.1063/1.4821858
22.
H. Hayashi, R. Huang, F. Oba, T. Hirayama, and I. Tanaka, J. Mater. Res. 26(04), 578583 (2011).
http://dx.doi.org/10.1557/jmr.2010.32
23.
K. Matsuzaki, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Thin Solid Films 496(1), 3741 (2006).
http://dx.doi.org/10.1016/j.tsf.2005.08.187
24.
M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono, Thin Solid Films 411(1), 134139 (2002).
http://dx.doi.org/10.1016/S0040-6090(02)00202-X
25.
A. Goyal, B. S. Yadav, O. P. Thakur, A. K. Kapoor, and R. Muralidharan, J. Alloys Compd. 583, 214219 (2014).
http://dx.doi.org/10.1016/j.jallcom.2013.08.115
26.
S. M. Sze and K. K. Ng, Physics of Semiconductor Devices ( John Wiley & Sons, 2006).
27.
J. B. Varley, J. R. Weber, A. Janotti, and C. G. Van de Walle, Appl. Phys. Lett. 97(14), 142106 (2010).
http://dx.doi.org/10.1063/1.3499306
28.
K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Express 6(8), 086502 (2013).
http://dx.doi.org/10.7567/APEX.6.086502
29.
D. Gogova, G. Wagner, M. Baldini, M. Schmidbauer, K. Irmscher, R. Schewski, Z. Galazka, M. Albrecht, and R. Fornari, J. Cryst. Growth 401, 665669 (2014).
http://dx.doi.org/10.1016/j.jcrysgro.2013.11.056
30.
K. Takakura, S. Funasaki, I. Tsunoda, H. Ohyama, D. Takeuchi, T. Nakashima, M. Shibuya, K. Murakami, E. Simoen, and C. Claeys, Phys. B 407(15), 29002902 (2012).
http://dx.doi.org/10.1016/j.physb.2011.08.061
31.
S. Müller, H. von Wenckstern, D. Splith, F. Schmidt, and M. Grundmann, Phys. Status Solidi A 211(1), 3439 (2014).
http://dx.doi.org/10.1002/pssa.201330025
32.
F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, J. Mater. Sci.: Mater. Electron. 26, 96249629 (2015).
http://dx.doi.org/10.1007/s10854-015-3627-6
33.
M. Arita, K. Torigoe, T. Yamauchi, T. Nagaoka, T. Aiso, Y. Yamashita, and T. Motooka, Appl. Phys. Lett. 104(13), 132103 (2014).
http://dx.doi.org/10.1063/1.4870419
34.
E. Korhonen, F. Tuomisto, D. Gogova, G. Wagner, M. Baldini, Z. Galazka, R. Schewski, and M. Albrecht, Appl. Phys. Lett. 106(24), 242103 (2015).
http://dx.doi.org/10.1063/1.4922814
35.
M. Passlack, N. E. J. Hunt, E. F. Schubert, G. J. Zydzik, M. Hong, J. P. Mannaerts, R. L. Opila, and R. J. Fischer, Appl. Phys. Lett. 64(20), 27152717 (1994).
http://dx.doi.org/10.1063/1.111452
36.
K. Irmscher, Z. Galazka, M. Pietsch, R. Uecker, and R. Fornari, J. Appl. Phys. 110(6), 063720 (2011).
http://dx.doi.org/10.1063/1.3642962
37.
J. B. Varley, H. Peelaers, A. Janotti, and C. G. Van de Walle, J. Phys.: Condens. Matter 23(33), 334212 (2011).
http://dx.doi.org/10.1088/0953-8984/23/33/334212
38.
T. Zacherle, P. C. Schmidt, and M. Martin, Phys. Rev. B 87(23), 235206 (2013).
http://dx.doi.org/10.1103/PhysRevB.87.235206
39.
M. Hiratani, K. Imagawa, and K. Takagi, J. Appl. Phys. 78(6), 42584260 (1995).
http://dx.doi.org/10.1063/1.359888
40.
H.-U. Krebs, M. Weisheit, J. Faupel, E. Süske, T. Scharf, C. Fuhse, M. Störmer, K. Sturm, M. Seibt, H. Kijewski, D. Nelke, E. Panchenko, and M. Buback, in Advances in Solid State Physics, edited by B. Kramer ( Springer, Berlin Heidelberg, 2003), Vol. 43, pp. 505518.
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/content/aip/journal/apl/109/10/10.1063/1.4962463
2016-09-09
2016-09-27

Abstract

Precise control of dopant composition is critical for the production of semiconductor films with desired properties. Here, we present results on the electrical properties for Si doped GaO films grown by pulsed laser deposition technique (PLD). The Si composition in the films can be controlled by changing the target composition as observed from the secondary ion mass spectroscopy measurement. The carrier density of the films is varied from the order of 1015 to 1020 cm−3 while the conductivity from 10−4 to 1 S cm−1 as measured by Hall equipment. The carrier density of the films has been verified by Kelvin force microscopy, which shows an increased surface work function with the increase of carrier density. The results suggest that the carrier density of β-GaO films is controllable by Si doping by PLD, paving a way to develop the GaO film-based electronic devices.

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