No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Large enhancement of positive magnetoresistance by Ce doping in Si epitaxial thin films
K. Ando, S. Takahashi, J. Ieda, H. Kurebayashi, T. Trypiniotis, C. H. W. Barnes, S. Maekawa, and E. Saitoh, Nat. Mater. 10, 655 (2011).
J.-C. Rojas-Sánchez, M. Cubukcu, A. Jain, C. Vergnaud, C. Portemont, C. Ducruet, A. Barski, A. Marty, L. Vila, J.-P. Attané, E. Augendre, G. Desfonds, S. Gambarelli, H. Jaffrés, J.-M. George, and M. Jamet, Phys. Rev. B 88, 064403 (2013).
A. Narayanan, M. D. Watson, S. F. Blake, N. Bruyant, L. Drigo, Y. L. Chen, D. Prabhakaran, B. Yan, C. Felser, T. Kong, P. C. Canfield, and A. I. Coldea, Phys. Rev. Lett. 114, 117201 (2015).
S. Balevičius, N. Zurauskienė, V. Stankevič, S. Keršulis, V. Plaušinaitienė, A. Abrutis, S. Zherlitsyn, T. Herrmannsdörfer, J. Wosnitza, and F. Wolf-Fabris, Appl. Phys. Lett. 101, 092407 (2012).
Article metrics loading...
We report the investigation into a large enhancement of the magnetoresistance
(MR) by Ce doping in Si epitaxial
thin films at room temperature. The positive MR is proportional to the square of the magnetic field at low magnetic fields below 5 T, while it increases linearly with regards to the strength of the magnetic field above 5 T. Based on the experimental finding that the change in the donor level corresponds to that of the MR ratio as a function of Ce concentration, the electronic state turns out to be influenced by Ce doping and strongly correlate the magnetotransport characteristics. It is concluded that this MR
effect appears via the Lorentz force effect on the carrier motion, which is enhanced by the random scattering potential distribution arising from the Ce doping.
Full text loading...
Most read this month