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We study the influence of V-pits on the overall conversion efficiency of bulk N based heterojunction solar cells grown by MOVPE. We show that V-pits significantly enhances the extraction of the photogenerated carriers in the InGaN absorber, resulting in a peak external quantum efficiency of 79% and a short circuit current density (twice the state of the art) of 2.56 mA/cm−2 under AM 1.5G conditions.


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