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This paper presents the heteroepitaxial growth of ultrawide bandgap β-GaO thin films on c-plane sapphire substrates by low pressure chemical vapor deposition. N-type conductivity in silicon (Si)-doped β-GaO films grown on sapphire substrate is demonstrated. The thin films were synthesized using high purity metallic gallium (Ga) and oxygen (O) as precursors. The morphology, crystal quality, and properties of the as-grown thin films were characterized and analyzed by field emission scanning electron microscopy, X-ray diffraction, electron backscatter diffraction, photoluminescence and optical, photoluminescence excitation spectroscopy, and temperature dependent van der Pauw/Hall measurement. The optical bandgap is ∼4.76 eV, and room temperature electron mobility of 42.35 cm2/V s was measured for a Si-doped heteroepitaxial β-GaO film with a doping concentration of 1.32 × 1018 cm−3.


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