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Tuning the magnetic properties and surface morphology of D
Ga films with high perpendicular magnetic anisotropy by N doping
S. Mizukami, F. Wu, A. Sakuma, J. Walowski, D. Watanabe, T. Kubota, X. Zhang, H. Naganuma, M. Oogane, Y. Ando, and T. Miyazaki, Phys. Rev. Lett. 106, 117201 (2011).
J. Winterlik, S. Chadov, A. Gupta, V. Alijani, T. Gasi, K. Filsinger, B. Balke, G. H. Fecher, C. A. Jenkins, F. Casper, J. Kübler, G.-D. Liu, L. Gao, S. S. P. Parkin, and C. Felser, Adv. Mater. 24, 6283 (2012).
S. Ouardi, T. Kubota, G. H. Fecher, R. Stinshoff, S. Mizukami, T. Miyazaki, E. Ikenaga, and C. Felser, Appl. Phys. Lett. 101, 242406 (2012).
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We report the tunable magnetic properties and the smoothened surface morphology of epitaxial D022 Mn-Ga (Mn3Ga and Mn2.5Ga) films by N doping using reactive sputtering at 480 °C. The 50 nm thick Mn-Ga films
grown with the N2/Ar gas flow rate (η) up to 0.66% showed 33%–50% reduction in the saturation magnetization compared to non-doped Mn-Ga. In particular, a single D022 phase was obtained in an optimal η range for Mn2.5Ga, resulted in the perpendicular magnetic anisotropy energy density of ∼1 MJ/m3 with 33% reduction in magnetization. Furthermore, the introduction of N provided the smoothened surface morphology at 50 nm thickness despite its high growth temperature, which is advantageous for thin film device applications.
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