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Spin-dependent transport and current modulation in a current-in-plane spin-valve field-effect transistor
T. Tahara, H. Koike, M. Kameno, T. Sasaki, Y. Ando, K. Tanaka, S. Miwa, Y. Suzuki, and M. Shiraishi, Appl. Phys. Express 8, 113004 (2015).
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We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet/nonferromagnet/ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device.
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