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Reproducible resistive switching in the super-thin Bi2
epitaxial film with SrRuO3
Y. S. Kim, D. H. Kim, J. D. Kim, Y. J. Chang, T. W. Noh, J. H. Kong, K. Char, Y. D. Park, S. D. Bu, J.-G. Yoon, and J. S. Chung, Appl. Phys. Lett. 86, 102907 (2005).
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The reproducible and reliable resistive switching is observed in the ultrathin Bi2FeCrO6 (BFCO) epitaxial
film on (001) SrTiO3 substrate with SrRuO3 as the bottom electrode. The as-grown BFCO film allows its ferroelectric
polarization switching under external electric field. With a 100-nm-radius tip contacting film surface, a stable bipolar resistive switching was observed through the conductive atomic force microscope. Furthermore, the resistive switching at negative bias was observed and its high/low current ratio is above 15 among a thousand of current versus voltage curves measured by the scanning tunneling microscope with a non-contacting nm-scale tip. It is argued that this transport mechanism is due to quantum tunneling, and the resistive switching in these junctions is because of ferroelectric switching.
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