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Enhanced carrier mobility of multilayer MoS2
thin-film transistors by Al2
S. Kim, A. Konar, W.-S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J.-B. Yoo, J.-Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, Nat. Commun. 3, 1011 (2012).
J. Wang, S. Li, X. Zou, J. Ho, L. Liao, X. Xiao, C. Jiang, W. Hu, J. Wang, and J. Li, Small 11, 5932 (2015).
J. Na, M.-K. Joo, M. Shin, J. Huh, J.-S. Kim, M. Piao, J.-E. Jin, H.-K. Jang, H. J. Choi, J. H. Shim, and G.-T. Kim, Nanoscale 6, 433 (2014).
S.-L. Li, K. Wakabayashi, Y. Xu, S. Nakaharai, K. Komatsu, W.-W. Li, Y.-F. Lin, A. Aparecido-Ferreira, and K. Tsukagoshi, Nano Lett. 13, 3546 (2013).
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We report the effect of Al2O3 encapsulation on the carrier mobility and contact resistance of multilayer MoS2
thin-film transistors by statistically investigating 70 devices with SiO2 bottom-gate dielectric. After Al2O3 encapsulation by atomic layer deposition, calculation based on Y-function method indicates that the enhancement of carrier mobility from 24.3 cm2 V−1 s−1 to 41.2 cm2 V−1 s−1 occurs independently from the reduction of contact resistance from 276 kΩ·μm to 118 kΩ·μm. Furthermore, contrary to the previous literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method of improving the carrier mobility of multilayer MoS2
transistors, providing important implications on the application of MoS2 and other two-dimensional materials into high-performance transistors.
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