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Characterisation of active dopants in boron-doped self-assembled silicon nanostructures
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Doping of silicon
nanocrystals has become an important topic due to its potential to enable the fabrication of environmentally friendly and cost-effective optoelectronic and photovoltaic devices. However, doping of silicon
nanocrystals has been proven difficult and most of the structural and electronic properties are still not well understood. In this work, the intrinsic and boron-doped self-assembled silicon
nanocrystals were prepared and mainly characterised by the transient current method to study the behaviour of charge carriers in these materials. Our experiments quantified the amount of electrically active boron
dopants that contributed to charge transport. From this, the boron
doping efficiency in the nanocrystal
superlattice was estimated.
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