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Fabrication of three dimensional diamond ultraviolet photodetector through down-top method
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photodetector have been fabricated on diamond
epitaxial layer through down-top approach, where diamond
epitaxial layer was grown between metal electrodes. A thin diamond
epitaxial layer was first grown on high-pressure high-temperature single crystal diamond substrate. Then, the diamond
epitaxial layer was covered by interdigitated tungsten
electrodes. Furthermore, another diamond
epitaxial layer was grown on uncovered area. At last, UV-Ozone treatment was used to oxidize the surface. The optoelectronic performance of the photodetector was characterized, exhibiting a large responsivity and a repeatable transient response behavior. Moreover, down-top process is beneficial for the electrode conductivity stability. Also, an ohmic contact could be formed between tungsten and diamond during growth. The results indicate that down-top process is an efficient way for fabrication of three dimensional
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