Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
J. Liu, Z. Li, L. Zhang, F. Zhang, A. Tian, K. Zhou, D. Li, S. Zhang, and H. Yang, Appl. Phys. Express 7(11), 111001 (2014).
K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, and S. Takagi, Appl. Phys. Express 5(8), 082103 (2012).
D. S. Sizov, R. Bhat, A. Zakharian, J. Napierala, K. Song, D. Allen, and C.-E. Zah, Appl. Phys. Express 3(12), 122101 (2010).
J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, and R. Craig, Appl. Phys. Express 3(11), 112101 (2010).
A. Tyagi, R. M. Farrell, K. M. Kelchner, C.-Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, and D. A. Cohen, Appl. Phys. Express 3(1), 011002 (2009).
T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S.-I. Nagahama, and T. Mukai, Appl. Phys. Express 2(6), 062201 (2009).
Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, and K. Katayama, Appl. Phys. Express 2(8), 082101 (2009).
A. Avramescu, T. Lermer, J. Müller, S. Tautz, D. Queren, S. Lutgen, and U. Strauß, Appl. Phys. Lett. 95(7), 071103 (2009).
A. Tian, J. Liu, L. Zhang, M. Ikeda, S. Zhang, D. Li, X. Fan, K. Zhou, P. Wen, and F. Zhang, Phys. Status Solidi C 13(5–6), 245247 (2016).
M. Suzuki, T. Uenoyama, and A. Yanase, Phys. Rev. B 52(11), 8132 (1995).
T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S. N. Yurkov, G. S. Simin, and M. Asif Khan, Solid-State Electron. 47(1), 111 (2003).
T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, and M. Koike, Appl. Phys. Lett. 65(5), 593 (1994).
J. P. Liu, J.-H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, Appl. Phys. Lett. 93(2), 021102 (2008).
A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, Appl. Phys. Lett. 92(5), 053502 (2008).
E. Jung, G. Hwang, J. Chung, O. Kwon, J. Han, Y.-T. Moon, and T.-Y. Seong, Appl. Phys. Lett. 106(4), 041114 (2015).
D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M.-H. Kim, and C. Sone, Appl. Phys. Lett. 99(4), 041112 (2011).
D. S. Meyaard, G.-B. Lin, Q. Shan, J. Cho, E. Fred Schubert, H. Shim, M.-H. Kim, and C. Sone, Appl. Phys. Lett. 99(25), 251115 (2011).
J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, Appl. Phys. Lett. 97(20), 201112 (2010).
K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 94(6), 061116 (2009).
M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 91(18), 183507 (2007).
L. Le, D. Zhao, D. Jiang, P. Chen, Z. Liu, J. Zhu, J. Yang, X. Li, X. He, J. Liu, S. Zhang, and H. Yang, J. Vac. Sci. Technol., B 33(1), 011209 (2015).
L. Le, D. Zhao, D. Jiang, P. Chen, Z. Liu, J. Yang, X. He, X. Li, J. Liu, and J. Zhu, Opt. Express 22(10), 11392 (2014).
W. Yang, D. Li, N. Liu, Z. Chen, L. Wang, L. Liu, L. Li, C. Wan, W. Chen, X. Hu, and W. Du, Appl. Phys. Lett. 100(3), 031105 (2012).
D. Zhang, Z. C. Liu, and X. D. Hu, Semicond. Sci. Technol. 24(4), 045003 (2009).
S.-N. Lee, S. Cho, H. Ryu, J. Son, H. Paek, T. Sakong, T. Jang, K. Choi, K. Ha, and M. Yang, Appl. Phys. Lett. 88(11), 111101 (2006).
Y.-K. Kuo and Y.-A. Chang, IEEE J. Quantum Electron. 40(5), 437 (2004).
D. S. Sizov, R. Bhat, A. Zakharian, K. Song, D. E. Allen, S. Coleman, and C.-E. Zah, IEEE J. Sel. Top. Quantum Electron. 17(5), 1390 (2011).
T. Hager, M. Binder, G. Brüderl, C. Eichler, A. Avramescu, T. Wurm, A. Gomez-Iglesias, B. Stojetz, S. Tautz, and B. Galler, Appl. Phys. Lett. 102(23), 231102 (2013).
T. Hager, G. Brüderl, T. Lermer, S. Tautz, A. Gomez-Iglesias, J. Müller, A. Avramescu, C. Eichler, S. Gerhard, and U. Strauss, Appl. Phys. Lett. 101(17), 171109 (2012).
S. Zhang, E. Xie, T. Yan, W. Yang, J. Herrnsdof, Z. Gong, I. M. Watson, E. Gu, M. D. Dawson, and X. Hu, J. Appl. Phys. 118(12), 125709 (2015).
M. A. Alam, M. S. Hybertsen, R. K. Smith, and G. A. Baraff, IEEE Trans. Electron Devices 47(10), 1917 (2000).
C. Xia, W. Hu, C. Wang, Z. Li, X. Chen, W. Lu, Z. S. Li, and Z. Li, Opt. Quantum Electron. 38(12–14), 1077 (2006).
E. M. Azoff, IEEE Trans. Electron Devices 36(4), 609 (1989).
S. L. Chuang, J. O'Gorman, and A. Levi, IEEE J. Quantum Electron. 29(6), 1631 (1993).

Data & Media loading...


Article metrics loading...



Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd