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/content/aip/journal/apl/109/9/10.1063/1.4961937
2016-09-02
2016-09-29

Abstract

We present a silicon-based triple junction solar cell that requires a deposition time of less than 15 min for all photoactive layers. As a low-bandgap material, we used thin layers of hydrogenated amorphous silicon germanium with lower band gap than commonly used, which is possible due to the application of hot wire chemical vapor deposition. The triple junction cell shows an initial energy conversion efficiency exceeding 10%, and with a relative performance stability within 6%, the cell shows a high tolerance to light-induced degradation. With these results, we help to demonstrate that hot wire chemical vapor deposition is a viable deposition method for the fabrication of low-cost solar cells.

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