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/content/aip/journal/apl/109/9/10.1063/1.4962136
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/content/aip/journal/apl/109/9/10.1063/1.4962136
2016-08-31
2016-09-27

Abstract

We present a thermodynamic theory of the conductive filament growth and dissolution in random access memory describing the observed features of their current-voltage (IV) characteristics. Our theory is based on the self-consisted Fokker-Planck approach reducing the filament kinetics to its thermodynamics. Expressing the observed IV features through material parameters, our results pave a way to device improvements.

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