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EFFECT OF COMPRESSIVE UNIAXIAL STRESS ON HIGH FIELD DOMAINS IN n‐TYPE Ge
1.J. C. McGroddy and M. I. Nathan, IBM Journal of Research and Dev. 11, 337 (1967).
2.B. J. Elliott, J. B. Gunn, and J. C. McGroddy, Appl. Phys. Letters 11, 253 (1967).
3.B. K. Ridley and T. B. Watkins, Proc. Phys. Soc. (London) 78, 293 (1961).
4.C. Hilsum, Proc. IRE 50, 185 (1962).
5.A. R. Hutson, A. Jayaraman, A. G. Chynoweth, A. J. Coriell, and W. L. Feldman, Phys. Rev. Letters 14, 639 (1965).
6.M. Shyam, J. W. Allen, and G. L. Pearson, IEEE Trans. El. Devices ED 13, 63 (1966).
7.G. Dresselhaus and M. S. Dresselhaus, Phys. Rev. 160, 649 (1967). References to the original experiments are given where these parameters have been determined experimentally.
8.J. J. Hall, private communication, is assumed to be the same as for silicon.
9.Calculated using for silicon and the hydrostatic pressure dependence of the 〈100〉–〈111〉 energy separation from M. I. Nathan, W. Paul, and H. Brooks, Phys. Rev. 124, 391 (1961).
10.W. Paul, J. Phys. Chem. Solids 8, 196 (1959).
11.P. N. Butcher, W. Fawcett, and C. Hilsum, IEEE Trans. El. Devices ED 13, 192 (1966).
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