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A WIDE‐RANGE VARIABLE‐FREQUENCY GUNN OSCILLATOR
1.J. B. Gunn, IBM J. of Res. and Dev. 10, 310 (1966).
2.J. E. Carroll, Electron. Letters 2, 141 (1966).
3.M. Shoji, Proc. IEEE 55, 130 (1967).
4.J. A. Capeland, J. Appl. Phys. 37, 3602 (1966).
5.D. E. McCumber and A. G. Chynoweth, IEEE Trans. Electron Dev. ED‐13, 4 (1966). These authors display a computer calculation of a domain forming at a point of reduced carrier concentration inside the crystal.
6.H. Kroemer, IEEE Spectrum 5, 47 (1968). (See specifically Fig. 4).
7.K. Kurokawa, Bell System Tech. J. XLVI, 2235 (1967).
8.A Gunn diode in a resonant circuit is very similar to this case. There the domain is formed at the cathode and collapses in the bulk when the field is driven below the value required to sustain the domain by the rf field.
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