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DISLOCATION ENERGY LEVEL IN SILICON FROM DISLOCATION VELOCITY MEASUREMENTS
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6.Choosing higher (m) values makes somewhat lower; however, we have no real basis for choosing (m) values different from those in Fig. 2. A further error arises because the energy gap in silicon does not vary linearly with temperature. Extrapolation from 400 °K leads to an energy gap higher by 4% than the measured value at low temperatures. The value of should be regarded as an upper limit since both the above considerations should reduce it. In the absence of high temperature energy gap data it is not possible to estimate the amount of this reduction.
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