Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
CO2 LASER RADIATION ABSORPTION IN SEMI‐INSULATING GALLIUM ARSENIDE
1.T. E. Walsh, RCA Rev. 27, 323 (1966).
2.F. A. Horrigan, R. I. Rudko, and D. I. Wilson, IEEE J. Quantum Elect. (to be published).
3.J. Comly, E. Garmire, and A. Yariv, J. Appl. Phys. 38, 4091 (1967).
4.For further information regarding the experimental procedure, see ref. 2.
5.With ‐in.‐thick specimens such effects turned out insignificant as was ascertained by applying antireflection coatings on some of the specimens’ backface; note that, in the latter configuration,
6.S. J. Fray, F. A. Johnson, J. E. Quarrington, and N. N. Williams, Proc. Phys. Soc. (London) 85, 153 (1965).
7.(a) W. Cochran, S. Fray, F. Johnson, J. Quarrington, and N. Williams, J. Appl. Phys. 32, 2102 (1961);
7.(b) S. D. Smith, R. E. Chaddock, and A. R. Goodwin, Proc. Kyoto Conf. Physics of Semiconductors (The Physical Society of Japan, Tokyo, 1966), p. 67.
8.M. Born and M. Blackman, Z. Physik 82, 551 (1933);
8.we are using the notations of ref. 10.
9.M. Lax and E. Burstein, Phys. Rev. 97, 39 (1955);
9.the subscript “o” refers to the dispersion oscillator, i.e., is the linear dipole moment associated with the fundamental resonance at
10.B. Szigeti, Proc. Roy. Soc. (London) A258, 377 (1960).
11.Structure in the absorption spectrum originates from the mode summation and reflects critical‐point energies in the combined density of states.
12.Frequencies measured in Raman units, that is, if is the highest optical phonon energy; see H. Bilz, R. Geick, and K. Renk, in Proc. Copenhagen Conf. Lattice Dynamics (Pergamon Press, New York, 1965), p. 335.
13.See, for instance, the review of F. A. Johnson, in Progress in Semiconductors, Vol. 9 (Temple Press, London, 1965), p. 181.
14.The measured absorption coefficients were converted to loss factors by means of the well‐known relation where n is the index of refraction and k the index of extinction. For GaAs, the index of refraction was derived from the usual Lorentz dispersion formula with parameter values adjusted to fit the reflectivity spectrum [S. Iwasa, I. Balslev, and E. Burstein, in Proc. Paris Conf. Physics of Semiconductors (Dunod Editeur, Paris, 1964), p. 1077]. At 10.6 μ, this procedure yields in accordance with recent experimental results obtained elsewhere (R. A. Gudmundsen, private communication).
15.D. L. Stierwalt and R. F. Potter, in Proc. Exeter Conf. Physics of Semiconductors (The Institute of Physics and The Physical Society, London, 1962), p. 513.
Article metrics loading...