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FORWARD CURRENT‐VOLTAGE CHARACTERISTICS AND DIFFERENTIAL RESISTANCE PEAK OF A SCHOTTKY BARRIER DIODE ON HEAVILY DOPED SILICON
1.F. A. Padovani and R. Stratton, Solid‐State Electron. 9, 695 (1966).
2.C. R. Crowell and V. L. Rideout, Solid State Electron, (to be published).
3.R. Stratton and F. A. Padovani, Solid State Electron. 10, 813 (1967).
4.A. N. Saxena, Surface Sci. (to be published).
5.W. Schottky, Physik. Z. 32, 833 (1931);
5.H. K. Henisch, Rectifying Semiconductor Contacts (Clarendon Press, Oxford, England, 1957), p. 182.
6.F. A. Padovani and G. G. Sumner, J. Appl. Phys. 36, 3744 (1965).
7.A. N. Saxena and D. Varady (unpublished).
8.P. T. Landsberg, Proc. Roy. Soc. (London) A‐206, 477 (1951).
9.The theoretical curve was provided by Padovani for Si with a carrier concentration of It was not considered worthwhile yet to run another computer program with a concentration of This will be done after measurements at liquid‐He temperature have been made for a quantitative comparison.
10.J. W. Conley, C. B. Duke, G. D. Mahan, and J. J. Tiemann, Phys. Rev. 150, 466 (1966).
11.C. R. Crowell and V. L. Rideout (private communication).
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