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THE EFFECT OF TRAPPING STATES ON TUNNELING IN METAL‐SEMICONDUCTOR JUNCTIONS
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10.1063/1.1652641
/content/aip/journal/apl/14/1/10.1063/1.1652641
http://aip.metastore.ingenta.com/content/aip/journal/apl/14/1/10.1063/1.1652641
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/content/aip/journal/apl/14/1/10.1063/1.1652641
2003-10-17
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: THE EFFECT OF TRAPPING STATES ON TUNNELING IN METAL‐SEMICONDUCTOR JUNCTIONS
http://aip.metastore.ingenta.com/content/aip/journal/apl/14/1/10.1063/1.1652641
10.1063/1.1652641
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