No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
ANNEALING CHARACTERISTICS OF n‐TYPE DOPANTS IN ION‐IMPLANTED SILICON
1.D. J. Mazey, R. S. Nelson, and R. S. Barnes, Phil. Mag. 17, 1145 (1968).
2.J. W. Mayer, O. J. Marsh, G. A. Shifrin, and R. Baron, Can. J. Phys. 45, 4073 (1967).
3.J. M. Fairfield and B. L. Crowder, AIME (to be published).
4.B. L. Crowder and N. A. Penebre, Rev. Sci. Instr. (to be published).
5.L. J. van der Pauw, Philips Res. Rept. 13, 1 (1958).
6.The number of determined from the sheet Hall coefficient is only an approximate measure of the total number of carriers which are electrically active. The sheet Hall coefficient is an average which weights the carriers of higher mobility more heavily, leading to a smaller value than the true number of In extreme cases (Ref. 2), the sheet Hall coefficient may give carrier which are only 50% of the true values. Stripping studies, in progress, indicate that the discrepancy is usually less than this for our implantations (70–95%).
7.W. M. Gibson, F. W. Martin, R. R. Stensgaard, F. Palmgren Jensen, N. I. Meyer, G. Galster, A. Johansen, and J. S. Olsen, Can. J. Phys. 46, 675 (1968).
8.V. K. Vasil’ev, E. I. Zorin, P. V. Pavlov, and D. I. Tetel’baum, Fiz. Tverd. Tela 9, 1905 (1967)
8.[V. K. Vasil’ev, E. I. Zorin, P. V. Pavlov, and D. I. Tetel’baum, English transl.: Soviet Phys.‐Solid State 9, 1503 (1968)].
9.This fact is not so obvious for As implants from Fig. 2. The ratio of electrons to implanted As does exhibit the type of dose dependence as shown for P in Fig. 1.
10.L. Eriksson, J. A. Davies, N. G. E. Johansson, and J. W. Mayer, J. Appl. Phys. 40, 841 (1969);
10.R. Baron, G. A. Shifrin, O. J. Marsh, and J. W. Mayer, J. Appl. Phys. (to be published).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month