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ELECTRICAL RESISTIVITY MODEL FOR POLYCRYSTALLINE FILMS: THE CASE OF SPECULAR REFLECTION AT EXTERNAL SURFACES
1.E. H. Sondheimer, Advan. Phys. 1, 1 (1952).
2.See, e.g., D. S. Campbell, in The Use of Thin Films in Physical Investigations (Academic Press Inc., New York, 1966), p. 315.
3.A. F. Mayadas, J. Appl. Phys. 39, 4241 (1968).
4.A. F. Mayadas, R. Feder, and R. Rosenberg, paper presented at 1969 International Conference on Thin Films, Boston, Mass. and to be published in J. Vac. Sci. Technol., Jul.‐Aug., 1969.
5.T. Iwata, R. J. Prosen, and B. E. Gran, J. Appl. Phys. 37, 1285 (1966).
6.We do not refer here to thermally activated charge transfer, tunnelling, or other nonmetallic behavior often found in discontinuous or heavily oxidized films.
7.See, e.g., Arthur C. Smith, James F. Janak, and Richard B. Adler, Electronic Conduction in Solids (McGraw‐Hill Book Co., New York, 1967), p. 174.
8.A. Messiah, in Quantum Mechanics (North‐Holland Publishing Co., Amsterdam, 1961) Vol. 1, p. 97.
9.For example, if and
10.Estimated values of R for grain boundaries and stacking faults are substantially larger than 0.1;
10.see, e.g., M. C. Gutzwiller, in Atomic and Electronic Structure of Metals (Am. Soc. for Metals, Cleveland, 1967), Chap. 12.
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