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RESISTIVITY OF rf SPUTTER‐THINNED ALUMINUM FILMS
1.V. Teodosic, Appl. Phys. Letters 9, 209 (1966).
2.B. Navinsek and G. Carter, Appl. Phys. Letters 10, 91 (1967).
3.R. T. C. Tsui, Semiconductor Products and Solid‐State Technol. 10, No. 12, 33 (1967).
4.C. J. Smithells, Metals Reference Book (interscience Publishers, Inc., New York, 1955), p. 673.
5.A. F. Mayadas, J. Appl. Phys. 39, 4241 (1968).
6.For any reasonably pure metal, the product is a constant, characteristic of that metal, and is essentially temperature‐independent. The value for was obtained by assuming that (see Ref. 5), since the value (Dr. I. Holwich, private communication) was known.
7.R. T. C. Tsui, Phys. Rev. 168, 107 (1968).
8.V. S. Kessel’man, Sov. Phys.‐Semiconductors 2, 76 (1968).
9.A. L. Southern, W. R. Willis, and M. T. Robinson, J. Appl. Phys. 34, 153 (1963).
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