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NEGATIVE CAPACITANCE IN AMORPHOUS SEMICONDUCTOR CHALCOGENIDE THIN FILMS
1.In‐House Laboratory Initiated R & D, Project 5016.11.844, Department of the Army Project 1T061101A91A adminstered by L. H. Eriksen and subtask on Amorphous Semiconductors by W. Doremus.
2.See, for example, A. D. Pearson, W. R. Northover, J. F. Dewald, and W. F. Peck, Jr., Advances in Glass Technology (Plenum Press, Inc., New York, 1962);
2.B. T. Kolomiets and E. A. Lebedev, Radiotech. Electron. 8, 2097 (1963);
2.D. L. Eaton, J. Am. Ceram. Soc. 47, 554 (1964);
2.Y. Mizushimaet al., Proc IEEE 53, 322 (1965);
2.C. Feldman and W. Guitierrez, J. Appl. Phys. 39, 2474 (1968);
2.S. R. Ovshinsky, Phys. Rev. Letters 21, 1450 (1968).
3.General reviews covering amorphous semiconductors may be found in N. F. Mott, Advan. Phys. 16, 49 (1967);
3.J. Tauc, Science 158, 1543 (1967);
3.A. R. Hiltonet al., Phys. Chem. Glasses 7, 105, 112 (1966);
3.J. P. Mackenzie, Ed., Modern Aspects of the Vitreous State (Butterworths Scientific Publ., Ltd., London, 1964), Chaps. 2 and 5;
3.B. T. Kolomiets, Phys. Status Solidi 7, 359, 713 (1964).
4.Energy Conversion Devices, Inc., registered trademark Ovonic Threshold Switch.
5.P. Walsh, R. Vogel, and E. J. Evans, Phys. Rev. 178, 1274 (1969).
6.Negative capacitance has been reported in a silicon single crystal;
6.O. J. Marsh and C. R. Viswanathan, J. Appl. Phys. 38, 3135 (1967).
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