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TEMPERATURE DEPENDENCE OF R HS IN ALUMINUM‐IMPLANTED LAYER IN n‐TYPE SINGLE CRYSTAL SILICON
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10.1063/1.1652803
/content/aip/journal/apl/14/9/10.1063/1.1652803
http://aip.metastore.ingenta.com/content/aip/journal/apl/14/9/10.1063/1.1652803
/content/aip/journal/apl/14/9/10.1063/1.1652803
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/content/aip/journal/apl/14/9/10.1063/1.1652803
2003-10-17
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: TEMPERATURE DEPENDENCE OF RHS IN ALUMINUM‐IMPLANTED LAYER IN n‐TYPE SINGLE CRYSTAL SILICON
http://aip.metastore.ingenta.com/content/aip/journal/apl/14/9/10.1063/1.1652803
10.1063/1.1652803
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